n-GaAs-p-(GaAs)1–x–у(Ge2)x(ZnSe)y geteroo‘tishlarining elektrofizik xossalari va ulardagi tok o‘tish mexanizmlari.
Keywords:
geterotuzilma, GaAs, Hall harakatchanligi, volt-amper xarakteristikasi, omik kontakt, epitaksial qatlam, fazoviy zaryad, tunnel-rekombinatsiya.Abstract
Mazkur maqolada n-GaAs-p-(GaAs)1–x–у(Ge2)x(ZnSe)y geterotuzilmalarining elektrofizik va rekombinatsion xususiyatlari tadqiq qilindi. Qattiq qorishmalarda omik kontaktlar hosil qilish texnologiyasi, Hall effektiga asoslangan o‘lchov natijalari hamda volt-amper va volt-sig‘im xarakteristikalari o‘rganildi. Tadqiqotlar davomida zaryad tashuvchilarning harakatchanligi va konsentratsiyasining haroratga bog‘liqligi aniqlandi. Geterotuzilmalarda tunnel-rekombinatsion hamda fazoviy zaryad bilan chegaralangan tok mexanizmlari kuzatildi. Shuningdek, geterochegarada yuqori qarshilikli qatlam hosil bo‘lishi va uning qalinligi texnologik parametrlar bilan bog‘liqligi ko‘rsatildi.
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