Ge₁₋ₓsnₓ yarim o‘tkazgichli qattiq qorishma zona tuzilishining xususiyatlarini o‘rganish
Keywords:
Ge₁₋ₓSnₓ qattiq eritma, yarim o‘tkazgich, zona tuzilishi, DFT, to‘g‘ridan-to‘g‘ri o‘tish, band gap, optoelektronika.Abstract
Mazkur maqolada germaniy (Ge) va qalay (Sn) asosidagi Ge₁₋ₓSnₓ yarim o‘tkazgichli qattiq qorishmaning elektron zona tuzilishi, energiya bo‘shlig‘i (band gap) xususiyatlari hamda ularning x miqdoriga bog‘liqligi tahlil qilingan. Dastlabki hisob-kitoblar ab initio (DFT – Density Functional Theory) usulida olib borildi. Natijalar shuni ko‘rsatadiki, Sn atomlarining ulushi ortishi bilan Ge matritsasining to‘g‘ridan-to‘g‘ri zonali o‘tish xususiyatlari kuchayadi va band gap qiymati kamayadi. Bu esa Ge₁₋ₓSnₓ tizimlarini infraqizil diapazondagi optoelektronika va yuqori tezlikdagi tranzistorlarda qo‘llash imkoniyatini ochadi.
References
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