STUDY OF THE ELECTRICAL PROPERTIES OF p-Si<Cu> SAMPLES
Abstract
Currently, the study of the influence of impurity atoms on the electrical properties of semiconductor materials is of particular importance [1-11]. This paper presents the results of studies of the electrical properties of p-Si samples. Single crystalline silicon of the KDB-0.3 grade, grown using the Czochralski method, was used as the initial sample. Diffusion was carried out at temperature T=1473 K for t=1.5 hours.
References
Chang Sun, Hieu T. Nguyen, Fiacre E.Rougieux, Daniel Macdonald М (2017).
Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by
photoluminescence imaging, Journal of Crystal Growth, 460, 98-104.
Michelakaki E., Valalaki K., Nassiopoulou A.G. (2013). Mesoscopic Ni particles and
nanowires by pulsed electrodeposition into porous Si, Journal of Nanoparticle Research,
(4), 1-9.
Saring Ph. and Seibt M. (2021). Recombination and charge collection at nickel silicide
precipitates in silicon studied by electron beam-induced current, Phys. Status Solidi B,
(10), 2100142(1-8).
Lindroos J., Fenning D.P., Backlund D.J., Verlage E., Gorgulla A. et al. (2013). Nickel:
A very fast diffuser in silicon, J.Appl.Phys. 113(20), 204906(1-7).
Turgunov N.A., Berkinov E.Kh. (2020). Structures of inclusions of impurity nickel
atoms in silicon monocrystals // International journal of engineering and advanced
technology, 9(4), 1436-1439.
Turgunov N.A., Mamajonova D.Kh., Berkinov E.Kh. (2021). Decay of impurity
clusters of nickel and cobalt atoms in silicon under the influence of pressure, Journal of
nano- and electronic physics, 13(5), 05006(1-4).
Turgunov N., Zainabidinov S., Berkinov E., Akbarov, Sh. (2020). Influence of the
clusters of impurient nickel atoms on the crystalline silicon structure, Euroasian Journal
of Semiconductors science and engineering, 2(5), 19-21.
Turgunov N.A., Berkinov E.Kh., Turmanova R.M. (2022). Influence of heat treatment
on the electrical properties and morphology of impurity accumulations of silicon doped
with nickel. Science and world, 4(104), 25-29.
Турғунов Н. A., Беркинов Э.Х., Мамажонова Д.Х. (2020). Влияние термической
обработки кремния, легированного никелем, на его электрические свойства.
Прикладная физика, 3, 40-45
Turgunov, N.A., Berkinov, E.Kh., Turmanova, R.M. (2023). Accumalations of
impurity Ni atoms and their effect on the electrophysical properties of Si. E3S Web of
Conferences, 402, 14018
Turgunov, N.A., Berkinov, E.Kh., Turmanova, R.M. (2023). The effect of thermal
annealing on the electrophysical properties of samples n-Si. East European
Journal of Physics, 3, 287–290
